Full-band CMC simulations of terahertz HEMTs
نویسندگان
چکیده
منابع مشابه
BCB-bridged Ka-band MMICs using In0.5Al0.5As/In0.5Ga0.5As metamorphic HEMTs
The InAlAs/InGaAs metamorphic HEMT (mHEMT) two-stage Ka-band amplifier and DC-30 GHz distributed SPST switch were designed and fabricated using low-k benzocyclobutene (BCB) bridged technology. This fabrication technology takes the advantages of its low dielectric permittivity (2.7), low loss tangent (0.008), low curing temperature, low water up-take, and simple manufacturing process. The MMIC f...
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あらまし GaN HEMTの高周波高出力の一例として X帯 50 W級,100 W級,並びに Ku帯 50 W級 GaN HEMT の技術課題と解決方法,特性例について述べる.GaN HEMT は出力電力密度が高い一方で,その発熱 密度も高い.発熱量を抑えるためには高い効率,そのために高い利得が必要である.X-Ku 帯において利得を上 げるために,フィールドプレートを用いない電流コラプス低減対策,Via-hole を用いたソース接地を適用した. その結果,X 帯 100 W 級 GaN HEMT では,飽和出力電力 51.1 dB(129 W),最大電力付加効率は 47.8%を 得た.Ku帯 50 W級 GaN HEMTでは,飽和出力電力 47.3 dBm(53 W),最大電力付加効率は 33.2%を得た. 最後にいくつかの実用例を紹介した. キーワード GaN HEMT,電力付加効...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2008
ISSN: 1742-6596
DOI: 10.1088/1742-6596/109/1/012001